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| PTF 10134 100 Watts, 2.1-2.2 GHz GOLDMOS (R) Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. * * INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 100 Watts Min - Power Gain = 10 dB Typ Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability * * * Typical Output Power & Efficiency vs. Input Power 120 Output Power 100 40 Efficiency 32 24 48 Output Power (Watts) 80 60 40 20 0 0 2 4 6 8 Efficiency (%) X 1234 101 569934 53 A VDD = 28 V IDQ = 1.3 A Total f = 2170 MHz 16 8 0 10 12 14 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.3 A Total, f = 2.17 GHz) Power Output at 1.5 dB Compression (VDD = 28 V, IDQ = 1.3 A Total, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 100 W, IDQ = 1.3 A Total, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 80 W, IDQ = 1.3 A Total, f = 2.17 GHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps P-1dB hD Y Min 9.5 100 -- -- Typ 10 -- 37 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10134 Characteristic (per side) Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e Min 65 -- 3.0 -- Electrical Characteristics (100% Tested--characteristics, conditions and limits shown per side) Typ -- -- -- 4.0 Max -- 5.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 2 A Maximum Ratings Parameter Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) (1) per Symbol VDSS VGS TJ PD TSTG RqJC Value 65 20 200 440 2.51 -40 to +150 0.39 Unit Vdc Vdc C Watts W/C C C/W side Typical Performance Efficiency (%) Return Loss (dB) Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency Output Power & Efficiency 12 11 Output Power (W) Gain (dB) Broadband Test Fixture Performance 11 60 Gain 50 9 120 100 80 VDD = 28 V IDQ = 1.3 A Total 40 Gain 10 9 8 7 2100 Efficiency (%) Gain (dB) 7 POUT = 25 W Efficiency - 30 5 20 -15 VDD = 28 V IDQ = 1.3 A Total 60 40 20 2200 5 Return Loss 3 2100 -25 10 -35 0 2180 2120 2140 2160 2180 2120 2140 2160 Frequency (MHz) Frequency (MHz) 2 e Power Gain vs. Output Power 11 PTF 10134 Output Power vs. Supply Voltage 65 Output Power (Watts) 10 IDQ = 1300 mA IDQ = 650 mA 60 55 50 45 40 Power Gain (dB) 9 8 IDQ = 325 mA IDQ = 1.3 A Total f = 2170 MHz VDD = 28 V f = 2170 MHz 7 0.1 1.0 10.0 100.0 24 26 28 30 32 34 36 Output Power (Watts) Supply Voltage (Volts) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) -15 -25 3rd Order Capacitance vs. Supply Voltage * 450 400 30 Cds and Cgs (pF) VDD = 28 V, IDQ = 1.3 A Total f1 = 2169 MHz, f2 = 2170 MHz 350 300 250 200 150 100 50 VGS = 0 V f = 1 MHz 25 20 15 IMD (dBc) 5th -45 -55 -65 0 20 40 60 80 100 120 7th Cds Crss 0 10 20 30 40 10 5 0 0 Output Power (Watts-PEP) Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 Temp. (C) 80 130 0.800 2.767 4.733 6.700 8.667 Voltage normalized to 1.0 V Series show current (A) 3 Crss -35 Cgs PTF 10134 Impedance Data (VDD = 28 V, POUT = 100 W, IDQ = 1.3 A Total) Z Source D e Z Load D TOW AR D G EN E RA T OR Frequency GHz 2.00 2.05 2.10 2.15 2.20 2.25 2.30 R Z Source W jX -14.40 -15.60 -17.60 -17.80 -14.60 -6.00 -1.20 R 5.76 7.40 9.60 16.00 19.00 22.00 20.00 Z Load W jX -1.80 -2.60 -3.00 -3.80 -4.00 -3.40 -2.80 2.10 2.60 3.00 2.80 2.60 2.44 2.60 - WAVELE NGTHS 0.0 0.1 0.2 0.3 LOAD S TOW ARD NG TH Z Load 2.0 GHz 2.3 GHz 2.3 GHz 0.1 LE W A VE Z Source 0.2 < -- - 2.0 GHz 0.3 45 0. 5 0.0 .4 4 0.4 0 .2 G G ---> S 0.3 Z0 = 50 W 0.1 e Test Circuit PTF 10134 Test Circuit Block Diagram for f = 2.0 GHz 0.184l 2.0 GHz Microstrip 50 W 0.044l 2.0 GHz Microstrip 26.1 W 0.025l 2.0 GHz Microstrip 43.9 W 0.185l 2.0 GHz Microstrip 67.2 W 0.053l 2.0 GHz Microstrip 8.7 W 0.076l 2.0 GHz Microstrip 8.7 W 0.031l 2.0 GHz Microstrip 9.5 W 0.072l 2.0 GHz Microstrip15.13W 0.341l 2.0 GHz Microstrip 58 W 0.119l 2.0 GHz Microstrip 50 W C1, C2, C3, C4, C5, C6, C15, C16 ATC 100B C7, C8, C13, C14 Digi-Key P4525-ND C9, C10, C11, C12, C19, C20 Digi-Key PC56106-ND C17, C18 ATC 100B C 21 ATC 100B R1, R2, R3, R4 Digi-Key P220ECT-ND L1, L2 TOKO,# LL2012-F2N7S L3, L4 PHILIPS,#BDS31314-6-452 T1, T2 Semi-rigid Coaxial Cable, 50 W Circuit Board Roger Microwave l1 l2, l17 l3, l6 l4, l7 l5, l8 l9, l13 l10, l14 l11, l15 l12, l16 l18 Capacitor, 10 pF Capacitor, 0.1 F Capacitor, 10 F 35VDC Capacitor, 0.1 F Capacitor, 0.3pF Resistor, 220 W Coil, 2.7 nH, SMT Ferrite Bead, 4mm TMM4, er 6.0, THICKNESS 0.30", 2 OZ COPPER 5 PTF 10134 e Assembly Diagram (not to scale) Artwork (scale approximate) 6 e Package Mechanical Description Package 20250 PTF 10134 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10134 Uen Rev. A 01-16-01 7 |
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